Research output per year
Research output per year
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2005
Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method
Aoyama, J., Takani, T., Toyabe, T. & Kalachev, L., 2005, 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc., p. 167-170 4 p. 1562051. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; vol. 2005).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review