Conduction in cosputtered Au-SiO2films

S. P. McAlister, A. D. Inglis, P. M. Kayll

Research output: Contribution to journalArticlepeer-review

Abstract

The percolation behavior and the temperature dependence of the resistivity of cosputtered Au-SiO2 films has been studied in films ranging in thickness from 10 to 1000 nm. We find evidence for dimensional crossover effects. At low temperatures, weak-localization behavior with positive magnetoresistance is observed in samples on the metallic side of the percolation transition. On the insulator side of the transition and very close to it, the temperature dependence of the resistivity shows a crossover from exp(1/T1/4)- to exp(1/T1/2)-type behavior, suggesting that more than one conduction mechanism occurs.

Original languageEnglish
Pages (from-to)5113-5120
Number of pages8
JournalPhysical Review B
Volume31
Issue number8
DOIs
StatePublished - 1985

Fingerprint

Dive into the research topics of 'Conduction in cosputtered Au-SiO2films'. Together they form a unique fingerprint.

Cite this