Magnetic storage device using induced magnetic reversal of a cobalt element array

Hanning Chen, Scott L. Whittenburg

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of the magnitude of applied field, cutting area and cell size of the element array on the 'seed' induced domain wall propagation were studied. Three different magnetic reversal mechanisms under different applied fields were investigated. Results showed that an applied field with magnitude around 0.7 or 0.8 T and an element array with cutting area less than 10 nm×10 nm are required to minimize the effect of the thermal fluctuations on the switching time.

Original languageEnglish
Pages (from-to)5278-5282
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number8
DOIs
StatePublished - Oct 15 2003

Fingerprint

Dive into the research topics of 'Magnetic storage device using induced magnetic reversal of a cobalt element array'. Together they form a unique fingerprint.

Cite this