Magnetic storage device using induced magnetic reversal of a cobalt element array

Hanning Chen; Scott L. Whittenburg

doi:10.1063/1.1609654

Magnetic storage device using induced magnetic reversal of a cobalt element array

Hanning Chen, Scott L. Whittenburg

Research and Creative Scholarship

University of New Orleans

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The effects of the magnitude of applied field, cutting area and cell size of the element array on the 'seed' induced domain wall propagation were studied. Three different magnetic reversal mechanisms under different applied fields were investigated. Results showed that an applied field with magnitude around 0.7 or 0.8 T and an element array with cutting area less than 10 nm×10 nm are required to minimize the effect of the thermal fluctuations on the switching time.

Original language	English
Pages (from-to)	5278-5282
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1609654
State	Published - Oct 15 2003

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10.1063/1.1609654

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title = "Magnetic storage device using induced magnetic reversal of a cobalt element array",

abstract = "The effects of the magnitude of applied field, cutting area and cell size of the element array on the 'seed' induced domain wall propagation were studied. Three different magnetic reversal mechanisms under different applied fields were investigated. Results showed that an applied field with magnitude around 0.7 or 0.8 T and an element array with cutting area less than 10 nm×10 nm are required to minimize the effect of the thermal fluctuations on the switching time.",

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AB - The effects of the magnitude of applied field, cutting area and cell size of the element array on the 'seed' induced domain wall propagation were studied. Three different magnetic reversal mechanisms under different applied fields were investigated. Results showed that an applied field with magnitude around 0.7 or 0.8 T and an element array with cutting area less than 10 nm×10 nm are required to minimize the effect of the thermal fluctuations on the switching time.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Magnetic storage device using induced magnetic reversal of a cobalt element array

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