The asymptotic form of the solution of Poisson's equation in a model of a three-dimensional semiconductor structure

L. V. Kalachev, I. A. Obukhov

Research output: Contribution to journalArticlepeer-review

Abstract

The method of boundary functions is used to construct the asymptotic form with respect to a small parameter for the solution of Poisson's equation, describing the distribution of the electrostatic potential in a parallelepiped which models a three-dimensional semiconductor structure.

Original languageEnglish
Pages (from-to)1361-1366
Number of pages6
JournalComputational Mathematics and Mathematical Physics
Volume32
Issue number9
StatePublished - 1992

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