Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method

Junichi Aoyama; Toshiyuki Takani; Toru Toyabe; Leonid Kalachev

doi:10.1109/sispad.2005.201499

Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method

Junichi Aoyama, Toshiyuki Takani, Toru Toyabe, Leonid Kalachev

Toyo University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.

Original language	English
Title of host publication	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	167-170
Number of pages	4
ISBN (Print)	4990276205, 9784990276201
DOIs	https://doi.org/10.1109/sispad.2005.201499
State	Published - 2005
Event	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan Duration: Sep 1 2005 → Sep 3 2005

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2005

Conference

Conference	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Country/Territory	Japan
City	Tokyo
Period	09/1/05 → 09/3/05

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10.1109/sispad.2005.201499

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Aoyama, J., Takani, T., Toyabe, T., & Kalachev, L. (2005). Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 (pp. 167-170). Article 1562051 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/sispad.2005.201499

Aoyama, Junichi ; Takani, Toshiyuki ; Toyabe, Toru et al. / Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method. 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 167-170 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method",

abstract = "A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.",

author = "Junichi Aoyama and Toshiyuki Takani and Toru Toyabe and Leonid Kalachev",

year = "2005",

doi = "10.1109/sispad.2005.201499",

language = "English",

isbn = "4990276205",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "167--170",

booktitle = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005",

note = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 ; Conference date: 01-09-2005 Through 03-09-2005",

}

Aoyama, J, Takani, T, Toyabe, T & Kalachev, L 2005, Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method. in 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005., 1562051, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 167-170, 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005, Tokyo, Japan, 09/1/05. https://doi.org/10.1109/sispad.2005.201499

Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method. / Aoyama, Junichi; Takani, Toshiyuki; Toyabe, Toru et al.
2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc., 2005. p. 167-170 1562051 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method

AU - Aoyama, Junichi

AU - Takani, Toshiyuki

AU - Toyabe, Toru

AU - Kalachev, Leonid

PY - 2005

Y1 - 2005

N2 - A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.

AB - A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.

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U2 - 10.1109/sispad.2005.201499

DO - 10.1109/sispad.2005.201499

M3 - Conference contribution

AN - SCOPUS:33845886375

SN - 4990276205

SN - 9784990276201

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 167

EP - 170

BT - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005

Y2 - 1 September 2005 through 3 September 2005

ER -

Aoyama J, Takani T, Toyabe T, Kalachev L. Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc. 2005. p. 167-170. 1562051. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/sispad.2005.201499

Threshold voltage model of single gate SOI MOSFETs derived from asymptotic method

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